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| Power Transistors 2SC4892 Silicon NPN triple diffusion planar type For power switching Unit: mm s Features q q q 13.00.2 4.20.2 5.00.1 10.00.2 1.0 q High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25C) Ratings 900 900 800 7 2 1 0.3 15 2 150 -55 to +150 Unit V V V V A A A W C C 90 2.50.2 1.20.1 C1.0 2.250.2 18.00.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 C1.0 123 2.50.2 2.50.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 900V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 0.05A VCE = 5V, IC = 0.5A IC = 0.2A, IB = 0.04A IC = 0.2A, IB = 0.04A VCE = 10V, IC = 0.05A, f = 1MHz IC = 0.2A, IB1 = 0.04A, IB2 = - 0.08A, VCC = 250V 4 1 3 1 800 6 3 1.5 1 V V MHz s s s min typ max 50 50 Unit A A V 1 Power Transistors PC -- Ta 20 1.2 (1) TC=Ta (2) Without heat sink (PC=2.0W) TC=25C IB=200mA 1.0 2SC4892 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 3 IC/IB=5 VCE(sat) -- IC TC=100C 25C 1 Collector power dissipation PC (W) 15 Collector current IC (A) (1) 0.8 10 0.6 0.4 100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 0.3 -25C 0.1 5 0.2 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 10mA 0.03 0.01 0.01 0.03 0.1 0.3 1 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) 3 25C 1 TC=-25C 100C 0.3 IC/IB=5 100 hFE -- IC 1000 VCE=5V fT -- IC VCE=10V f=1MHz TC=25C Forward current transfer ratio hFE 30 25C TC=100C Transition frequency fT (MHz) 0.3 1 3 300 100 30 10 3 1 0.3 0.1 0.001 0.003 10 -25C 3 0.1 1 0.03 0.3 0.01 0.01 0.03 0.1 0.3 1 0.1 0.01 0.03 0.1 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=250V TC=25C Area of safe operation (ASO) 10 3 Non repetitive pulse TC=25C ICP IC t=1ms Switching time ton,tstg,tf (s) 10 3 1 0.3 0.1 0.03 0.01 0 0.2 0.4 Collector current IC (A) 1 0.3 0.1 0.03 0.01 0.003 0.001 tstg 10ms DC ton tf 0.6 0.8 1.0 1 3 10 30 100 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 2SC4892 Thermal resistance Rth(t) (C/W) 1000 100 (1) (2) 10 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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